High Resistivity N-Type Silicon Detectors Produced by Neutron Transmutation Doping

Author

Kim, C. ; Kim, H. ; Yusa, A. ; Miki, S. ; Husimi, K. ; Ohkawa, S. ; Fuchi, Y.

Author_Institution

Department of Electronics Engineering, Korea University, Kodaira, Tokyo, Japan

Volume

Issue

fYear

1979

Firstpage

292

Lastpage

296

Keywords

Boron; Conductivity; Detectors; Doping; Gases; Impurities; Isotopes; Neutrons; Nuclear electronics; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

DOI

10.1109/TNS.1979.4329647

Filename

4329647

Link To Document