Title :
High Resistivity N-Type Silicon Detectors Produced by Neutron Transmutation Doping
Author :
Kim, C. ; Kim, H. ; Yusa, A. ; Miki, S. ; Husimi, K. ; Ohkawa, S. ; Fuchi, Y.
Author_Institution :
Department of Electronics Engineering, Korea University, Kodaira, Tokyo, Japan
Keywords :
Boron; Conductivity; Detectors; Doping; Gases; Impurities; Isotopes; Neutrons; Nuclear electronics; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1979.4329647
