Title :
Flexible Thin-Film Tandem Solar Cells With >30% Efficiency
Author :
Kayes, Brendan M. ; Ling Zhang ; Twist, Rose ; I-Kang Ding ; Higashi, G.S.
Author_Institution :
Alta Devices, Sunnyvale, CA, USA
Abstract :
Alta Devices, Inc. has previously reported on single-junction thin-film GaAs photovoltaic devices on flexible substrates with efficiencies up to 28.8% under AM1.5G solar illumination at 1-sun intensity. Here, we show that the same technology platform can be extended to tandem devices that are capable of even higher efficiencies: so far up to 30.8%. Specifically, here, we report on a lattice-matched, series-connected, two-junction device with InGaP as the light-absorbing material of the top cell and GaAs as the absorber in the bottom cell. The material is grown by metallorganic chemical vapor deposition, and then, the device is lifted off by the epitaxial liftoff (ELO) process, as previously reported. This demonstrates that ELO is not only capable of record-setting single-junction performance but capable of achieving world-class efficiency with a multijunction architecture as well.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; solar cells; 1-sun intensity; AM1.5G solar illumination; InGaP-GaAs; epitaxial liftoff process; flexible substrates; flexible thin-film tandem solar cells; lattice-matched device; light-absorbing material; metalorganic chemical vapor deposition; record-setting single-junction performance; series-connected device; single-junction thin-film photovoltaic devices; two-junction device; Computer architecture; Gallium arsenide; Microprocessors; Photonics; Photovoltaic cells; Photovoltaic systems; Epitaxial layers; III–V semiconductor materials; gallium arsenide; indium compounds; photovoltaic cells; solar energy; thin films; thin-film devices;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2014.2299395