DocumentCode :
836033
Title :
Spin valve Josephson junctions
Author :
Bell, Christopher ; Burnell, Gavin ; Leung, Chi-Wah ; Tarte, Edward J. ; Blamire, Mark G.
Author_Institution :
Mater. Sci. Dept., IRC in Supercond. & IRC Nanotechnol., Cambridge, UK
Volume :
15
Issue :
2
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
908
Lastpage :
911
Abstract :
We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable π-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported, the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co:Fe20Ni80 ratio.
Keywords :
Permalloy; cobalt; copper; magnetoresistance; niobium; spin valves; sputter deposition; superconducting junction devices; 4.2 K; Josephson junctions; Nb-Fe20Ni80-Cu-Co-Nb; dc magnetron sputtering; magnetic barriers; magnetoresistive devices; pseudo-spin valve; remanent states; spin valve magnetoresistance; Critical current; Current measurement; Josephson junctions; Magnetic field measurement; Magnetoresistance; Spin valves; Superconducting epitaxial layers; Superconducting films; Superconducting magnets; Temperature; Josephson junctions; magnetoresistive devices;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2005.850112
Filename :
1439786
Link To Document :
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