DocumentCode :
836176
Title :
Uncooled 
-Band Wide-Band Gain Lasers With 32-Channel Coverage and 
20-dBm ASE Injection for WDM-PON
-Band Wide-Band Gain Lasers With 32-Channel Coverage and 20-dBm ASE Injection for WDM-PONAuthor :
Lee, E.H. ; Bang, Y.C. ; Kang, J.K. ; Keh, Y.C. ; Shin, D.J. ; Lee, Joon Sang ; Park, S.S. ; Kim, Inna ; Lee, Jung Keun ; Oh, Y.K. ; Jang, D.H.
Volume :
18
Issue :
5
fYear :
2006
fDate :
3/1/2006 12:00:00 AM
Firstpage :
667
Lastpage :
669
Abstract :
We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110 
C as well as entire 32 100-GHz-spaced channels (1533–1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.
C as well as entire 32 100-GHz-spaced channels (1533–1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.Keywords :
Optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM); Bandwidth; Diode lasers; Fiber lasers; Laser transitions; Laser tuning; Quantum well lasers; Semiconductor lasers; Temperature distribution; Wavelength division multiplexing; Wideband; Optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.870115
Filename :
1597290
Link To Document :
