Title :
1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°
Author :
Chen, S.M. ; Tang, M.C. ; Wu, Junyong ; Jiang, Qimeng ; Dorogan, V.G. ; Benamara, M. ; Mazur, Y.I. ; Salamo, G.J. ; Seeds, Alwyn J. ; Liu, Hongying
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
fDate :
September 25 2014
Abstract :
A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; quantum dot lasers; semiconductor superlattices; DFL; InAs-GaAs; SLS; dislocation filter layers; quantum dot laser; strained-layer superlattice; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2414
