MEMS-tunable 1.55-μm VCSEL with extended tuning range incorporating a buried tunnel junction

Author

Maute, M. ; Kogel, B. ; Bohm, G. ; Meissner, P. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

18

Issue

5

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

688

Lastpage

690

Abstract

We present an electrically pumped and micromechanically tunable InP-based vertical-cavity surface-emitting laser operating in the 1.55-μm wavelength range. The current confinement is achieved by a buried tunnel junction. The GaAs-based movable top mirror membrane is fabricated separately, assembled on top of the device, and can be actuated electrothermally. A single mode output power of about 1.7 mW and a tuning range of 28 nm was obtained. By the use of an antireflection coating at the semiconductor-air-interface, we were able to extend the tuning range up to 60 nm as expected from one-dimensional simulations.

Keywords

III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; laser mirrors; laser modes; laser tuning; micro-optics; micromechanical devices; optical communication equipment; semiconductor lasers; surface emitting lasers; 1.55 mum; GaAs; InP; MEMS; VCSEL; antireflection coating; buried tunnel junction; laser tuning; mirror membrane; vertical-cavity surface-emitting laser; Biomembranes; Laser excitation; Laser modes; Laser tuning; Mirrors; Pump lasers; Surface emitting lasers; Surface waves; Tunable circuits and devices; Vertical cavity surface emitting lasers; Microelectromechanical systems (MEMS); semiconductor lasers; tunable lasers; vertical-cavity surface-emitting lasers (VCSELs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.870066

Filename

1597297