DocumentCode
836448
Title
Enhanced Operating Range of WDM PON Implemented by Using Uncooled RSOAs
Author
Cho, K.Y. ; Takushima, Y. ; Chung, Y.C.
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon
Volume
20
Issue
18
fYear
2008
Firstpage
1536
Lastpage
1538
Abstract
We report on the operable ranges of temperature and wavelength for a 1.25-Gb/s wavelength-division-multiplexed passive optical network (WDM PON) implemented by using uncooled reflective semiconductor optical amplifiers (RSOAs). Both the gain and modulation bandwidth of the RSOA are substantially reduced at high temperatures. As a result, it is difficult to achieve the error- free operation at temperatures above 40degC. In order to mitigate this limitation, we implement a simple bias-control circuit, in which the bias current is controlled stepwise according to the operating temperature of the RSOA. Using this circuit, we extend the operable wavelength range of the RSOA-based WDM PON to ~55 nm in the temperature range of -20degC to 60degC.
Keywords
optical fibre networks; passive networks; semiconductor optical amplifiers; wavelength division multiplexing; RSOA; WDM PON; bias current; bias-control circuit; bit rate 1.25 Gbit/s; reflective semiconductor optical amplifiers; temperature -20 C to 60 C; wavelength 55 nm; wavelength-division-multiplexed passive optical network; Bandwidth; Circuits; Light sources; Optical network units; Optical transmitters; Passive optical networks; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution; Wavelength division multiplexing; Passive optical network (PON); semiconductor optical amplifier (SOA); wavelength-division multiplexing (WDM);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.928835
Filename
4600156
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