Simulation of static and dynamic properties of edge-emitting multiple-quantum-well lasers

Author

Bandelow, Uwe ; Hünlich, Rolf ; Koprucki, Thomas

Author_Institution

Weierstrass Inst. for Appl. Anal. & Stochastics (WIAS), Berlin, Germany

Volume

9

Issue

3

fYear

2003

Firstpage

798

Lastpage

806

Abstract

This paper demonstrates simulation tools for edge-emitting multiple-quantum-well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a two-dimensional simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to equations for the optical field. Furthermore, a method is described that allows for an efficient quasi-three-dimensional simulation of dynamic properties of multisection edge-emitting lasers.

Keywords

Helmholtz equations; carrier lifetime; k.p calculations; optical hole burning; optical losses; quantum well lasers; semiconductor device models; Helmholtz equations; carrier transport; drift-diffusion equations; drift-diffusion model; dynamic properties; edge-emitting multiple-quantum-well lasers; eight-band k·p calculations; multisection edge-emitting lasers; photon balance equation; quasi-three-dimensional simulation; self-consistently coupled equations; simulation tools; static properties; strained MQW active region; transverse cross section; two-dimensional simulation; Equations; Laser modes; Laser transitions; Optical computing; Optical coupling; Optical resonators; Optical sensors; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2003.818343

Filename

1250482