DocumentCode :
836892
Title :
A monolithic array of silicon, drift detectors for high-resolution gamma-ray imaging
Author :
Fiorini, C. ; Longoni, A. ; Perotti, F. ; Labanti, C. ; Rossi, E. ; Lechner, P. ; Soltau, H. ; Strüder, Lothar
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
Volume :
49
Issue :
3
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
995
Lastpage :
1000
Abstract :
In this work, the preliminary results obtained with a high position resolution gamma-ray imaging detector are presented. The detector consists of a single CsI(Tl) scintillator crystal optically coupled to a monolithic array of 19 silicon drift detectors (SDDs) used as photodetectors. In this array, having a total sensitive area of about 1 cm2, each SDD has a front-end JFET directly integrated on the detector chip, close to the collecting anode. This architecture reduces the electronic noise of each single photodetector to a value small enough to obtain a submillimeter position resolution at 122 keV gamma-ray energy. The present detector module represents the development of a previous prototype based on a very limited numbers of SDDs.
Keywords :
biomedical electronics; diagnostic radiography; gamma-ray detection; junction gate field effect transistors; photodetectors; position sensitive particle detectors; silicon radiation detectors; 122 keV; CsI:Tl; Si; collecting anode; detector chip; electronic noise; front-end JFET; high-resolution gamma-ray imaging; monolithic array; photodetectors; position resolution; silicon drift detectors; single scintillator crystal; total sensitive area; Gamma ray detection; Gamma ray detectors; Image resolution; Nuclear imaging; Optical arrays; Optical coupling; Optical sensors; Photodetectors; Sensor arrays; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.1039603
Filename :
1039603
Link To Document :
بازگشت