DocumentCode :
836912
Title :
Active pixel sensors on high-resistivity silicon and their readout
Author :
Chen, W. ; De Geronimo, G. ; Li, Z. ; Connor, P.O. ; Radeka, V. ; Rehak, P. ; Smith, G.C. ; Yu, B.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
49
Issue :
3
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
1006
Lastpage :
1011
Abstract :
The concept of X-ray active matrix pixel sensor (XAMPS) is introduced. XAMPSs are direct illumination, position sensitive X-ray detectors with the possibility of containing 1000 000 pixels. They count the number of diffracted X-rays in each pixel by measuring the total charge released by converted X-rays in the body of the sensor. Readout is accomplished with a relatively small number of channels equal to the square root of the number of pixels. The estimated readout time can be about 1 ms. Noise of the readout electronics can be so low that practically no additional fluctuations in the number of incident X-rays per pixel are added and, therefore, the XAMPS performance is very close to that of an ideal detector for X-ray crystallography.
Keywords :
X-ray apparatus; X-ray crystallography; X-ray detection; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; Si; X-ray active matrix pixel sensor; X-ray crystallography; X-ray imaging; XAMPS; active pixel sensors; estimated readout time; fluctuations; high-resistivity silicon; noise; position sensitive X-ray detectors; protein crystallography; readout electronics; silicon radiation detectors; Charge measurement; Current measurement; Fluctuations; Lighting; Matrix converters; Readout electronics; Silicon; X-ray detection; X-ray detectors; X-ray diffraction;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.1039605
Filename :
1039605
Link To Document :
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