Title :
Modeling phosphorus diffusion in three dimensions
Author :
Richardson, Walter B. ; Carey, Graham F. ; Mulvaney, Brian J.
Author_Institution :
Dept. of Math., Texas Univ., San Antonio, TX, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
A three-dimensional process simulator in which both the standard nonlinear diffusion model and a five-species kinetic model are implemented to model phosphorus diffusion in silicon is described. The reaction-diffusion equations are discretized using finite differences in space and the numerical method of lines. The resulting ordinary differential equations are solved using the system integrator LSODP. LSODP uses a backward difference formula for time integration and a Krylov projection method to solve the linear system in the inner Newton loop. Comparisons of the two diffusion models are run on several test problems. Results show that the Krylov approach works well for the mildly asymmetric system of the single species, but requires a large dimension (Km≈20) subspace for the five-species model
Keywords :
differential equations; diffusion in solids; digital simulation; electronic engineering computing; elemental semiconductors; phosphorus; physics computing; semiconductor device models; semiconductor doping; silicon; 3D simulation; Krylov projection method; P diffusion modelling; Si:P; backward difference formula; five-species kinetic model; inner Newton loop; nonlinear diffusion model; numerical lines method; ordinary differential equations; reaction-diffusion equations; system integrator LSODP; three-dimensional process simulator; Associate members; Electrons; Impurities; Kinetic theory; Lattices; Physics; Semiconductor device modeling; Semiconductor process modeling; Silicon; Testing;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on