DocumentCode :
837414
Title :
Characterization of CdTe/CdZnTe detectors
Author :
Sato, Goro ; Takahashi, Tadayuki ; Sugiho, Masahiko ; Kouda, Manabu ; Mitani, Takefumi ; Nakazawa, Kazuhiro ; Okada, Yuu ; Watanabe, Shin
Author_Institution :
Inst. of Space & Astronaut. Sci., Sagamihara, Japan
Volume :
49
Issue :
3
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
1258
Lastpage :
1263
Abstract :
In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract μτ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (μτ) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by μτ products, it can extract μτ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; carrier mobility; position sensitive particle detectors; semiconductor counters; 2 mm; CdTe; CdZnTe; analytic spectral model; charge induction efficiency; charge transport properties; induction efficiency; low mobility-lifetime products; planar configuration; position dependent semiconductor counters; Cadmium compounds; Conductivity; Electromagnetic wave absorption; Gamma ray detectors; Photonic band gap; Physics; Space technology; Spectral analysis; Voltage; Zinc;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.1039648
Filename :
1039648
Link To Document :
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