Title :
Electron trapping variations in single-crystal pixelated HgI2 gamma-ray spectrometers
Author :
Baciak, J.E. ; He, Z. ; DeVito, R.P.
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
The characteristics of thick (∼6 mm) HgI2 room-temperature gamma-ray detectors having 4 small pixel anodes are investigated. Spectra for the different anodes (overall and for individual interaction depths) are presented. The mu-tau product for electrons was measured to study the variations of electron transport within a single HgI2 crystal. By using the single polarity charge sensing with depth sensing, the μeτe was estimated to vary from ∼9×10-4 cm2/V to 7×10-3 cm2/V. Individual pixels have the ability to produce spectra with resolutions less than 3% at 662 keV. Some effects of electron detrapping and hole transport are also discussed.
Keywords :
electron traps; gamma-ray detection; mercury compounds; position sensitive particle detectors; semiconductor counters; semiconductor materials; 6 mm; 662 keV; HgI2; electron detrapping; electron transport; electron trapping variations; hole transport; interaction depths; room-temperature gamma-ray detectors; single polarity charge sensing; single-crystal pixelated gamma-ray spectrometers; small pixel anodes; Anodes; Cathodes; Charge carrier processes; Crystalline materials; Crystals; Electron traps; Gamma ray detectors; Semiconductor materials; Spectroscopy; Transportation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039649
