DocumentCode :
837506
Title :
High-resolution Schottky CdTe diode detector
Author :
Takahashi, Tadayuki ; Mitani, Takefumi ; Kobayashi, Yoshihito ; Kouda, Manabu ; Sato, Goro ; Watanabe, Shin ; Nakazawa, Kazuhiro ; Okada, Yuu ; Funaki, Minoru ; Ohno, Ryoichi ; Mori, Kunishiro
Author_Institution :
Inst. of Space & Astronaut. Sci., Kanagawa, Japan
Volume :
49
Issue :
3
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
1297
Lastpage :
1303
Abstract :
We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2×2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21×21 mm2 are now available with an energy resolution of ∼2.8 keV. Long-term stability can be easily attained for relatively thin (<1 mm) detectors if they are cooled or operated under a high bias voltage.
Keywords :
Schottky diodes; leakage currents; semiconductor counters; 0.5 to 1 mm; 60 keV; CdTe; Schottky CdTe diode detector; bias voltage; charge-collection efficiency; leakage current; long-term stability; Electrodes; Energy resolution; Envelope detectors; Gamma ray detection; Gamma ray detectors; Leakage current; Physics; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.1039655
Filename :
1039655
Link To Document :
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