DocumentCode
837506
Title
High-resolution Schottky CdTe diode detector
Author
Takahashi, Tadayuki ; Mitani, Takefumi ; Kobayashi, Yoshihito ; Kouda, Manabu ; Sato, Goro ; Watanabe, Shin ; Nakazawa, Kazuhiro ; Okada, Yuu ; Funaki, Minoru ; Ohno, Ryoichi ; Mori, Kunishiro
Author_Institution
Inst. of Space & Astronaut. Sci., Kanagawa, Japan
Volume
49
Issue
3
fYear
2002
fDate
6/1/2002 12:00:00 AM
Firstpage
1297
Lastpage
1303
Abstract
We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2×2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21×21 mm2 are now available with an energy resolution of ∼2.8 keV. Long-term stability can be easily attained for relatively thin (<1 mm) detectors if they are cooled or operated under a high bias voltage.
Keywords
Schottky diodes; leakage currents; semiconductor counters; 0.5 to 1 mm; 60 keV; CdTe; Schottky CdTe diode detector; bias voltage; charge-collection efficiency; leakage current; long-term stability; Electrodes; Energy resolution; Envelope detectors; Gamma ray detection; Gamma ray detectors; Leakage current; Physics; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.1039655
Filename
1039655
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