Rapid determination of long generation lifetime

The determination of the long generation lifetime by using the Zerbst plot technique or the saturation capacitance technique are time-consuming. A new rapid technique suitable to determine the long generation lifetime is suggested. This method is based on analysing the non-saturation C-t transient of an MOS capacitor under a linear voltage sweep. A depletion linear voltage sweep at a relatively high rate will drive an MOS capacitor into a deep depletion state rapidly. As the capacitance-saturation need not be reached, drawing such a C-t transient curve is time-saving. A simple procedure may be used to extract the generation lifetime from this curve. The experiments show that the measured results are well self-consistent and the method is reasonable and appreciatively time-saving