Title :
Performance Gain Through Dynamic Control of Device Geometry: Nanoelectromechanical Carbon Nanotube-Based Switch
Author :
Engström, K.E. ; Kinaret, J.M.
Author_Institution :
Dept. of Appl. Phys., Chalmers Univ. of Technol., Goteborg
Abstract :
Performance advantages resulting from a dynamic control of device geometry in a nanoscale nanoelectromechanical systems device are discussed. Specifically, a nanoscale three-terminal carbon nanotube-based relay in a semiclassical analysis is investigated. As an illustration, the authors estimate the optimal subthreshold swing S of the system and find that it can be made superior to that of the ideal MOSFET; values in the range S=20-60mV/dec can be obtained with typical parameter values
Keywords :
carbon nanotubes; nanoelectronics; relays; CMOS devices; carbon nanotubes; device geometry; dynamic control; field-effect transistors; ideal MOSFET; nanoelectromechanical carbon nanotube-based switch; nanorelay; nanoscale nanoelectromechanical systems device; nanoscale three-terminal carbon nanotube-based relay; nanoswitch; nanotechnology; nanotransistor; quantum tunneling; subthreshold slope; subthreshold swing; CMOS technology; Carbon nanotubes; FETs; Geometry; MOSFET circuits; Nanoelectromechanical systems; Nanoscale devices; Performance gain; Relays; Switches; CMOS devices; Carbon nanotubes (CNTs); field-effect transistors (FETs); nanoelectromechanical systems (NEMS); nanorelay; nanoswitch; nanotechnology; nanotransistor; quantum tunneling; subthreshold slope; subthreshold swing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.886707
