Title :
Charge collection studies of SOI diodes
Author :
Colladant, T. ; Ferlet-Cavrois, V. ; Musseau, O. ; Hoir, A.L. ; Campbell, A.B. ; Buchner, S. ; Knudson, A. ; McMorrow, D. ; Fischer, B. ; Schlögl, M. ; Lewis, D.
Author_Institution :
Groupe de Phys. des Solides, Univ. Paris 6-7, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
Charge collection measurements on SOI diodes have been performed with heavy ion microbeam and pulsed focused laser. Both irradiation techniques show that no electrical coupling occurs. However, laser measurements show an optical coupling effect when irradiation occurs close to the isolation trench. Qualitative electromagnetic simulations have been performed to confirm and describe the optical coupling
Keywords :
ion beam effects; isolation technology; laser beam effects; semiconductor diodes; silicon-on-insulator; SOI N+/P diode structures; SOI diodes; charge collection measurements; heavy ion microbeam irradiation; isolation trench; optical coupling effect; pulsed focused laser irradiation; qualitative electromagnetic simulations; single event effect sensitivity; Couplings; Electromagnetic measurements; Laboratories; Optical pulses; Performance evaluation; Pulse measurements; Semiconductor diodes; Semiconductor lasers; Silicon; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039669
