Temperature dependence of heavy ion-induced current transients in Si epilayer devices

Author

Laird, J.S. ; Hirao, T. ; Onoda, S. ; Mori, H. ; Itoh, H.

Author_Institution

Japan Atomic Energy Res. Inst., Takasakishi, Japan

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1389

Lastpage

1395

Abstract

We report on the temperature dependence of the heavy-ion transient-ion beam induced current response of Si epilayer devices from 80 to 300 K. The measurements were performed on a heavy-ion microbeam in conjunction with the new transient-ion beam induced current system developed at the Japan Atomic Energy Research Institute. Furthermore, we perform a detailed comparison with technology computer-aided design (TCAD) simulations and discuss the results in terms of TCAD modeling, experimental procedure, and the implications for temperature-related single-event upset modeling

Keywords

ion beam effects; semiconductor device models; semiconductor device testing; semiconductor diodes; semiconductor epitaxial layers; silicon; technology CAD (electronics); transients; 80 to 300 K; Si; Si epilayer devices; TCAD modeling; heavy ion-induced current transients; heavy-ion microbeam; heavy-ion transient-ion beam induced current response; p⁺nn⁺ epilayer diode; technology computer-aided design simulations; temperature dependence; temperature-related single-event upset modeling; transient-ion beam induced current system; Atomic measurements; Computational modeling; Computer simulation; Current measurement; Design automation; Performance evaluation; Single event upset; Temperature dependence; Temperature distribution; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039672

Filename

1039672