DocumentCode :
837733
Title :
Fermi´s golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers
Author :
Deppe, D.G. ; Huang, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume :
42
Issue :
3
fYear :
2006
fDate :
3/1/2006 12:00:00 AM
Firstpage :
324
Lastpage :
330
Abstract :
Electron capture from a quantum dot´s (QDs) wetting layer is described by Fermi´s golden rule that relates the transition rate to the density of final states. The wetting layer capture causes a brief nonequilibrium electron distribution between the QD ground state and its wetting layer states and can slow a QD laser´s modulation response. This effect is studied for time constants and capture conditions relevant to self-organized InAs QDs. It is shown that even a moderately fast electron capture consistent with present low temperature measurements can limit a QD laser´s modulation speed.
Keywords :
Fermi level; III-V semiconductors; electron capture; ground states; indium compounds; optical modulation; quantum dot lasers; semiconductor doping; Fermi rule; InAs; ground state; modulation response; nonequilibrium electron capture; p-doped quantum-dot lasers; self-organized InAs QD; wetting layer state; Diode lasers; Electrons; Epitaxial layers; Laser modes; Laser transitions; Quantum dot lasers; Radioactive decay; Semiconductor lasers; Spontaneous emission; Temperature sensors; InAs; laser; photonic crystal; quantum dot (QD);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2005.859913
Filename :
1597419
Link To Document :
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