Enhancement-Mode GaAs n-Channel MOSFET

Author

Rajagopalan, Karthik ; Abrokwah, Jonathan ; Droopad, Ravi ; Passlack, Matthias

Author_Institution

Freescale Semicond. Inc, Tempe, AZ

Volume

27

Issue

12

fYear

2006

Firstpage

959

Lastpage

962

Abstract

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In_0.3Ga_0.7As channel layer, a channel mobility of up to 6207 cm²/Vmiddots, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mum, a source/drain spacing of 3 mum, and a threshold voltage of 0.05 V show a saturation current, transconductance, on-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omegamiddotmm, and 162 mV/dec, respectively

Keywords

III-V semiconductors; MOSFET; gallium arsenide; indium compounds; 0.05 V; 1 micron; 13.1 to 18.7 nm; 3 micron; InGaAs-GaAs; channel mobility; compound semiconductor; dielectric stack; enhancement-mode n-channel MOSFET; oxide/GaAs interface; unpinned Fermi level; Amorphous materials; CMOS technology; Dielectric constant; Gallium arsenide; Isolation technology; MOSFET circuits; Radio frequency; Silicon; Threshold voltage; Transconductance; Compound semiconductor; GaAs; MOSFETs; enhancement mode; high-mobility channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.886319

Filename

4016201