Comparison of the sensitivity to heavy ions of 0.25-μm bulk and SOI technologies

Author

Gasiot, G. ; Ferlet-Cavrois, V. ; Roche, P. ; Flatresse, P. ; Hose, C.D. ; Musseau, O. ; du Port de Poncharra, J.

Author_Institution

STMicroelectronics, Crolles, France

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1450

Lastpage

1455

Abstract

The sensitivity to heavy ions of nonhardened 0.25-μm partially depleted (PD) silicon on insulator (SOI) and bulk technologies is studied with experiments, device, and circuit simulations. Comparable threshold linear energy transfer (LET) are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For nonhardened technologies, SOI is then less sensitive than bulk to heavy ions.

Keywords

CMOS logic circuits; CMOS memory circuits; MOSFET; SRAM chips; circuit simulation; ion beam effects; semiconductor device models; silicon-on-insulator; 0.25 micron; 64 kbit; 64-kbit SRAM; NMOS transistor; PMOS transistor; SOI bit-latch registers; SOI saturated cross section; bulk technologies; circuit simulations; device simulations; heavy ion irradiation; heavy ion sensitivity; nonhardened technologies; partially depleted SOI technologies; single event upset sensitivity; threshold linear energy transfer; Circuit simulation; Degradation; Discrete event simulation; Energy exchange; Immune system; Random access memory; Robustness; Silicon on insulator technology; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039682

Filename

1039682