Title :
Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
Author :
Ferlet-Cavrois, V. ; Marcandella, C. ; Giraud, G. ; Gasiot, G. ; Colladant, T. ; Musseau, O. ; Fenouillet, C. ; du Port de Poncharra, J.
Author_Institution :
CEA/DAM-Ile de France, Bruyeres-le-Chatel, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
The parasitic bipolar amplification of silicon on insulator (SOI) devices is analyzed as a function of the technology integration from 0.8 μm down to 0.1 μm. Experiments and simulations show that the bipolar gain does not increase with technology downscaling. The body tie efficiency, to reduce the bipolar amplification, is measured on both transistors and circuits. Implications on the dose rate hardness are deduced on registers with and without body ties as a function of the SOI technology integration.
Keywords :
amplifiers; bipolar transistors; nuclear electronics; radiation hardening (electronics); silicon-on-insulator; 0.8 to 0.1 micron; SOI technologies; bipolar gain; body tie efficiency; dose rate hardness; parasitic bipolar amplification; silicon-on-insulator devices; transient irradiation; transistors; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Contacts; Integrated circuit measurements; Isolation technology; MOSFETs; Registers; Silicon on insulator technology; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039683
