• DocumentCode
    837811
  • Title

    Analysis of total dose tolerance of LOCOS isolated MOSFET by 2-D self-consistent simulations

  • Author

    Torres, A. ; Flament, O.

  • Author_Institution
    DAM Ile-de-France, CEA, Bruyeres-le-Chatel, France
  • Volume
    49
  • Issue
    3
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    1462
  • Lastpage
    1467
  • Abstract
    The total dose tolerance of parasitic LOCOS field transistors is analyzed using two-dimensional (2-D) self-consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.
  • Keywords
    MOSFET; X-ray effects; isolation technology; leakage currents; oxidation; radiation hardening (electronics); semiconductor device models; 10 keV; 2-D self-consistent simulations; 5 to 20 krad; LOCOS isolated MOSFET; Si-SiO2; Si-SiO2 interface; X-ray irradiation; field oxidation; ionizing effects; isolation process sequence; numerical simulations; parasitic LOCOS field transistors; radiation hardening; radiation-induced leakage current; substrate doping level; total dose tolerance; Analytical models; Doping; Implants; Leakage current; MOSFET circuits; Numerical simulation; Oxidation; Scanning electron microscopy; Threshold voltage; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.1039684
  • Filename
    1039684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=837811