Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits

Author

Deval, Y. ; Lapuyade, H. ; Fouillat, P. ; Barnaby, H. ; Darracq, F. ; Briand, R. ; Lewis, D. ; Schrimpf, R.D.

Author_Institution

IXL, Bordeaux I Univ., Talence, France

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1468

Lastpage

1473

Abstract

A design methodology to harden linear integrated circuits with respect to high dose-rate effects is presented. It takes into account the photocurrents induced within the substrate which are responsible for the major degradation of the electrical response of the circuits. This noninvasive approach can be applied to any electronic function. Laser irradiation is used to validate the technique, so that very high levels of dose rates can be experimentally simulated.

Keywords

bipolar analogue integrated circuits; integrated circuit design; laser beam effects; radiation hardening (electronics); bandgap voltage; bipolar IC; collector-substrate junctions; design methodology; dose-rate-hardened linear integrated circuits; electrical response degradation; electronic function; high dose-rate effects; laser irradiation; noninvasive approach; photocurrents; Analog integrated circuits; Application specific integrated circuits; Circuit simulation; Degradation; Design methodology; Nuclear electronics; Nuclear power generation; Photoconductivity; Semiconductor materials; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039685

Filename

1039685