Title :
Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs
Author :
Inguimbert, C. ; Duzellier, S. ; Ecoffet, R.
Author_Institution :
ONERA-DESP, Toulouse, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
This paper deals with the use of short-range beams in order to measure the sensitive thickness of devices. In the case of a Hitachi 4-Mbit SRAM, σ(E) measurements have been compared to GEANT 4 calculations, taking into account the effects of the overlayers. The analysis of the experimental data at two bias levels has pointed out that σ(E) is directly correlated with the energy deposited in sensitive volume (SV) for low ranges, on the other hand charge collection mechanisms have a strong impact for long ranges.
Keywords :
SRAM chips; ion beam effects; σ(E); 4 Mbit; GEANT 4; Hitachi SRAM; charge collection mechanisms; heavy ion penetration depth; overlayers; sensitive volumes; upset; Computer aided software engineering; Deconvolution; Extraterrestrial measurements; Orbital calculations; Probes; Process design; Random access memory; Single event upset; Thickness measurement; Volume measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039687
