Title :
Silicon-on-sapphire MOSFET model for analogue circuit simulation
Author :
Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Murray, S.J. ; Mole, P.J.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
2/1/1992 12:00:00 AM
Abstract :
A simple, physically based circuit simulation model for silicon-on-sapphire (SOS) MOSFETs is presented. The model has been implemented in SPICE and shows accurate prediction of the onset of the kink effect. Simulation results of amplifier circuits show significant improvement in predicting operating point and gain compared with bulk MOS models
Keywords :
MOS integrated circuits; circuit analysis computing; equivalent circuits; insulated gate field effect transistors; semiconductor device models; MOSFET model; SOS type; SPICE; Si-Al2O3; amplifier circuits; analogue circuit simulation; gain prediction; kink effect onset; operating point prediction;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
