Title :
Performance improvement in tensile-strained In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As metamorphic HEMT
Author :
Hsu, Wei-Chou ; Huang, Dong-Hai ; Lin, Yu-Shyan ; Chen, Yeong-Jia ; Huang, Jun-Chin ; Wu, Chang-Luen
fDate :
3/1/2006 12:00:00 AM
Abstract :
This paper proposes a In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; DC characteristics; In0.5Al0.5As-InGaAs-In0.5Al0.5As; RF characteristics; V-shaped channel; current driving capability; extrinsic transconductance characteristic; high electron mobility transistor; maximum oscillation frequency; metamorphic HEMT; output power characteristic; power added efficiency; power gain; tensile-strained channel; thermal stability; unity-gain cutoff frequency; Buffer layers; Cutoff frequency; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; mHEMTs; Metamorphic high-electron mobility transistor (HEMT); V-shaped; microwave; power; tensile strain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.863545
