DocumentCode
838914
Title
New physically-based PiN diode compact model for circuit modelling applications
Author
Igic, P.M. ; Mawby, P.A. ; Towers, M.S. ; Batcup, S.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Volume
149
Issue
4
fYear
2002
fDate
8/1/2002 12:00:00 AM
Firstpage
257
Lastpage
263
Abstract
A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity modulation and non-quasistatic charge storage effects within the structure. To validate the power diode compact model, simulation results are compared with those from a detailed drift-diffusion finite-element model, as well as with experimental results (for two different devices), showing an excellent agreement in all cases. The model is found to be efficient and robust in all cases examined
Keywords
finite element analysis; p-i-n diodes; power semiconductor diodes; semiconductor device models; PIN diode; circuit simulation; compact model; conductivity modulation; drift-diffusion finite element model; nonquasistatic charge storage; one-dimensional model; power semiconductor device;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20020365
Filename
1040127
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