Title :
Low temperature behaviour of channel transit time constant in MOS transistor
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
The channel transient response time constant of a MOS transistor is studied through the transmission line network of the conductance channel in the 296-77 K temperature range. The temperature dependence of the channel transit time constant is modelled through the temperature sensitive parameters such as inversion layer mobility, the Fermi potential, intrinsic carrier concentration and threshold voltage. It is shown that the channel time constant is strongly sensitive to the temperature variation in the inversion region and results in the MOS transistor channel resistance having zero, negative and positive temperature coefficients depending upon the gate bias voltage
Keywords :
carrier density; insulated gate field effect transistors; inversion layers; semiconductor device models; transient response; 296 to 77 K; Fermi potential; MOS transistor; channel transient response time constant; channel transit time constant; conductance channel; gate bias voltage; intrinsic carrier concentration; inversion layer mobility; temperature sensitive parameters; threshold voltage; transmission line network;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
