Study and characterisation of MOSFET integrated magnetodetector based on hot carrier detection

Author

El-Hennawy, Adel ; Al-Ghamdi, F.

Author_Institution

Fac. of Sci., King Abdulaziz Univ., Jeddah, Saudi Arabia

Volume

139

Issue

1

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

119

Lastpage

125

Abstract

An experimental study and analytical modelling of a novel MOSFET integrated magnetodetector are presented. It is based on the injection of hot electrons from a MOSFET channel into a split floating gate. The magnetic field to be measured deviates the hot carrier stream in the floating gate towards one of the two gate splits. These splits feed the input of a very low level current to frequency convertor. A linear response (better than 2%) over a very wide range of measurement (10⁶) to the magnetic field is experimentally demonstrated. A very high sensitivity (10 nT) is also measured. The high sensitivity and wide range of measurement are attributed to a new leakage compensation technique and to an exponential conversion of the magnetic current into frequency

Keywords

electric sensing devices; hot carriers; insulated gate field effect transistors; magnetic field measurement; MOSFET; exponential conversion; gate splits; hot carrier detection; hot electrons; leakage compensation technique; linear response; magnetodetector; split floating gate;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

125127