Title :
Monte Carlo study of strained GermaniumNanoscale bulk pMOSFETs
Author :
Ghosh, Bahniman ; Fan, Xiao-Feng ; Register, Leonard F. ; Banerjee, Sanjay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
3/1/2006 12:00:00 AM
Abstract :
In this paper, we perform fullband Monte Carlo simulations of nanoscale strained Ge bulk pMOSFETs with compressive strain in the strained Ge layer. We consider transport in the presence of phonon, ionized impurity, surface roughness scattering and impact ionization. Quantum confinement in the inversion layer is taken into account in the form of a modified potential. Strained Gedevices gave higher drive current when compared with unstrained Ge devices for the device structures studied.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; germanium; impact ionisation; nanoelectronics; semiconductor device models; surface roughness; surface scattering; Ge; Monte Carlo simulations; compressive strain; impact ionization; inversion layer; ionized impurity; modified potential; nanoscale bulk pMOSFET; phonon transport; quantum confinement; surface roughness scattering; Capacitive sensors; Impact ionization; Impurities; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Potential well; Rough surfaces; Surface roughness; Germanium (Ge); MOSFET; Monte Carlo (MC); high-; strain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.863765
