• DocumentCode
    839117
  • Title

    15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO

  • Author

    Liu, H.G. ; Watkins, S.P. ; Bolognesi, C.R.

  • Author_Institution
    the Dept. of Physic, Simon Fraser Univ., Burnaby, BC, Canada
  • Volume
    53
  • Issue
    3
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    559
  • Lastpage
    561
  • Abstract
    Type-II InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a 15-nm base were fabricated by contact lithography: 0.73×11 μm2 emitter devices feature fT=384GHz (fMAX=262GHz) and BVCEO=6V. This is the highest fT ever reported for InP/GaAsSb DHBTs, and an "all-technology" record fT×BVCEO product of 2304 GHz·V. This result is credited to the favorable scaling of InP/GaAsSb/InP DHBT breakdown voltages (BVCEO) in thin collector structures.
  • Keywords
    III-V semiconductors; arsenic compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; lithography; semiconductor device breakdown; submillimetre wave transistors; 15 nm; 384 GHz; 6 V; InP-GaAsSb-InP; breakdown voltages; contact lithography; cutoff frequencies; double heterojunction bipolar transistors; thin collector structures; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Electron mobility; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; Lithography; Spontaneous emission; Voltage; Breakdown voltage (BV); GaAsSb; GaInAs; InP; cutoff frequencies; double heterojunction bipolar transistors (DHBTs); heterojunction bipolar transistors (HBTs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.863542
  • Filename
    1597535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=839117