On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

Author

Oxley, C.H. ; Uren, M.J. ; Coates, A. ; Hayes, D.G.

Author_Institution

De Montfort Univ., Leicester, UK

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

565

Lastpage

567

Abstract

The temperature and carrier density dependence of electron intrinsic saturation velocity (v_si) in a 0.3-μm gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that v_si fell rapidly with increasing sheet carrier concentration (n_s), but was only a very weak function of ambient temperature (T_amb). This behavior is consistent with the hot-phonon model of carrier transport.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 0.3 micron; AlGaN-GaN; S-parameter measurements; ambient temperature; carrier density; carrier transport; electron saturation velocity; high-electron mobility transistor; hot-phonon model; quasi-static model; sheet carrier concentration; Aluminum gallium nitride; Charge carrier density; Density measurement; Electrons; Gallium nitride; HEMTs; Length measurement; Scattering parameters; Temperature dependence; Velocity measurement; GaN; heterojunction field-effect transistor (HFET); high-electron mobility transistor (HEMT); quasi-static model; saturation velocity; sheet carrier concentration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.863540

Filename

1597537