Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

Author

Fu, Ssu-I ; Cheng, Shiou-Ying ; Chen, Tzu-Pin ; Lai, Po-Hsien ; Hung, Ching-Wen ; Chu, Kuei-Yi ; Chen, Li-Yang ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

Volume

53

Issue

12

fYear

2006

Firstpage

2901

Lastpage

2907

Abstract

Conformal passivation on an InGaP/GaAs HBT with significant reduction in the base surface-recombination effect is demonstrated. Not only dc behaviors but also RF performances are remarkably improved compared with the conventional emitter-ledge structure. Based on the conformal passivation, i.e., the base surface is covered by the depleted InGaP ledge structure and sulfur ((NH₄)₂S_x) treatment, lower base surface-recombination current density, lower specific contact resistance, lower sheet resistance, higher current gain, higher collector current, and higher maximum oscillation frequency are obtained

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; (NH₄)₂S_x treatment; HBT; InGaP-GaAs; base surface-recombination current; conformal passivation; ledge structure; sheet resistance; specific contact resistance; sulfur passivation; Contact resistance; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Passivation; Radio frequency; Surface resistance; Surface treatment; Temperature; $(hbox{NH}_{4})_{2}hbox{S}_{X}$; Base surface-recombination current; ledge; sheet resistance; specific contact resistance; sulfur passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.885094

Filename

4016340