Title :
A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
Author :
Torres-Rios, Emmanuel ; Torres-Torres, Reydezel ; Valdovinos-Fierro, Gregorio ; Gutiérrez-D, Edmundo A.
Author_Institution :
Dept. of Electron., Inst. Nacional de Astrofisica, Puebla, Mexico
fDate :
3/1/2006 12:00:00 AM
Abstract :
An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-μm channel-length MOSFET.
Keywords :
MOSFET; S-parameters; electric resistance measurement; semiconductor device measurement; 0.18 micron; MOSFET; RF-CMOS; S-parameter measurement; analytical determination; direct determination; gate bias-dependent components; gate bias-independent components; parameter extraction; series resistance; CMOS technology; Data mining; Electrical resistance measurement; Extraterrestrial measurements; Independent component analysis; Length measurement; MOSFET circuits; Radio frequency; Scattering parameters; Voltage; Parameter extraction; RF-CMOS; series resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870328
