A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters

Author

Torres-Rios, Emmanuel ; Torres-Torres, Reydezel ; Valdovinos-Fierro, Gregorio ; Gutiérrez-D, Edmundo A.

Author_Institution

Dept. of Electron., Inst. Nacional de Astrofisica, Puebla, Mexico

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

571

Lastpage

573

Abstract

An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-μm channel-length MOSFET.

Keywords

MOSFET; S-parameters; electric resistance measurement; semiconductor device measurement; 0.18 micron; MOSFET; RF-CMOS; S-parameter measurement; analytical determination; direct determination; gate bias-dependent components; gate bias-independent components; parameter extraction; series resistance; CMOS technology; Data mining; Electrical resistance measurement; Extraterrestrial measurements; Independent component analysis; Length measurement; MOSFET circuits; Radio frequency; Scattering parameters; Voltage; Parameter extraction; RF-CMOS; series resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870328

Filename

1597539