A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study

Author

Kumar, M. Jagadesh ; Singh, Preeti

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

577

Lastpage

579

Abstract

Current gain is an important design parameter of bipolar transistors. While a SiGe base is commonly used to increase the current gain, the recently reported surface accumulation layer transistor (SALTran) concept has been shown to give a similar current gain enhancement. Using two-dimensional numerical simulation studies, we show for the first time that a combination of the SiGe base and the SALTran concept can be used to realize super beta bipolar transistors with peak current gains more than 12000.

Keywords

Ge-Si alloys; accumulation layers; bipolar transistors; semiconductor device models; SiGe; bipolar transistors; current gain; surface accumulation layer transistor; Analog circuits; Bipolar transistors; Charge carrier processes; Circuit simulation; Doping profiles; Electron emission; Germanium silicon alloys; Numerical simulation; Photonic band gap; Silicon germanium; Bipolar transistor; SiGe base; current gain; simulation; surface accumulation layer transistor (SALTran);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.863538

Filename

1597541