Title :
Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
Author :
Kondo, Masao ; Sugii, Nobuyuki ; Hoshino, Yutaka ; Hirasawa, Wataru ; Kimura, Yoshinobu ; Miyamoto, Masafumi ; Fujioka, Toru ; Kamohara, Shiro ; Kondo, Yasuichi ; Kimura, Shin´ichiro ; Yoshida, Isao
Author_Institution :
Adv. Analog Technol. Div., Renesas Technol. Corp., Takasaki
Abstract :
A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si0.85Ge0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a Pout of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls
Keywords :
Ge-Si alloys; MOSFET; cellular radio; mobile handsets; power amplifiers; silicon; 70 nm; LDMOSFET; Si-SiGe; cellular handsets; high performance RF power; laterally diffused MOSFET; misfit dislocations; power amplifier; relaxed SiGe structure; thick strained Si structure; Broadband amplifiers; GSM; Gallium arsenide; Germanium silicon alloys; MOSFETs; Multiaccess communication; Radio frequency; Silicon germanium; Telephone sets; Wideband; Laterally diffused MOSFETs (LDMOSFETs); SiGe; misfit dislocations; power amplifiers; strained-silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885669
