Title :
Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part II: Statistical Analysis and Prediction of Failure Time
Author :
Redaelli, Andrea ; Ielmini, Daniele ; Russo, Ugo ; Lacaita, Andrea L.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
The statistical spread of intrinsic data retention times in phase-change memory (PCM) cells is studied. Based on the crystallization and percolation model described in part 1, the crystalline grain size in the amorphous volume after data loss is extracted. From the temperature dependence of grain size, the authors calculate the statistical shape factor for the distribution of failure times, allowing a statistical prediction of data retention in PCM large arrays. The scaling and optimization issues with respect to failure time statistical spread are finally addressed
Keywords :
crystallisation; grain size; nanotechnology; percolation; phase change materials; random-access storage; statistical analysis; crystalline grain size; crystallization model; failure time prediction; intrinsic data retention; nanoscaled phase-change memories; percolation model; phase-change memory cells; statistical analysis; statistical prediction; statistical shape factor; Amorphous materials; Crystallization; Data mining; Grain size; Phase change materials; Phase change memory; Shape; Statistical analysis; Temperature dependence; Temperature distribution; Amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase-change memory (PCM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885525
