Title :
High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm
Author :
Kovsh, A.R. ; Wang, J.S. ; Hsiao, R.S. ; Chen, L.P. ; Livshits, D.A. ; Lin, G. ; Ustinov, V.M. ; Chi, J.Y.
Author_Institution :
Ind. Technol. Res. Inst., Taiwan, Taiwan
Abstract :
High-power narrow ridge waveguide lasers emitting with a wavelength around 1.3 μm were realised with a single In0.36GaAsN0.022 quantum well with GaAs barriers. A narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 1.3 micron; 2.6 ohm; 200 mW; 210 mW; GaAs barriers; InGaAsN-GaAs; high-power singlemode lasers; kink-free output power; laser diodes; lateral mode continuous-wave operation; narrow ridge waveguide lasers; quantum well; slope efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031085
