Title :
Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures
Author :
Sun, J.P. ; Wang, Wei ; Toyabe, Toru ; Gu, Ning ; Mazumder, Pinaki
Author_Institution :
Michigan Univ., Ann Arbor, MI
Abstract :
By applying a fully self-consistent solution of the Schrodinger-Poisson equations, a simple unified approach has been developed in order to study the gate current and gate capacitance of nanoscale-MOS structures with ultrathin dielectric layer. In this paper, the model has been employed to investigate various gate structure and material combinations, thereby demonstrating wide applicability of the present model in the design of nanoscale-MOSFET devices. The results obtained by applying the proposed model are in good agreement with experimental data and previous models in the literature. A new result concerning optimum nitrogen content in HfSiON high-k gate-dielectric structure reported in this paper requires experimental verification through device fabrication
Keywords :
MOSFET; dielectric materials; hafnium compounds; nanotechnology; nitrogen; semiconductor device models; silicon compounds; HfSiON; Schrodinger-Poisson equations; gate capacitance model; gate current model; high-k gate-dielectric structure; nanoscale-MOS structures; nanoscale-MOSFET devices; optimum nitrogen content; ultrathin dielectric layer; Capacitance; Dielectric materials; Electrons; High K dielectric materials; MOSFETs; Nanostructures; Schrodinger equation; Substrates; Sun; Tunneling; Gate current; high-$k$ dielectric; nanoscale MOSFETs; quantum modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885637
