• DocumentCode
    839437
  • Title

    The Hole Role in Solid-State Imagers

  • Author

    Theuwissen, Albert J P

  • Author_Institution
    DALSA Semicond., Eindhoven
  • Volume
    53
  • Issue
    12
  • fYear
    2006
  • Firstpage
    2972
  • Lastpage
    2980
  • Abstract
    The importance of holes present in the pixels of solid-state image sensors is described by Theuwissen et al. (IEDM Tech. Dig. 2005, p. 817). Today´s success of digital imaging is based on the positive effect of an accumulation layer that reduces the interface-related dark current and dark current fixed-pattern noise. This superb imaging feature is applied in charge-coupled devices as well as in complementary metal-oxide-semiconductor devices, in consumer as well as in professional equipment. Holes are not only used to improve the dark performance of imagers; other examples of efficient use of holes are fixing electrostatic potentials, creating gate structures, draining photon-generated charges, and constructing antiblooming means
  • Keywords
    CCD image sensors; CMOS image sensors; photoconductivity; accumulation layer; charge-coupled devices; complementary metal-oxide-semiconductor devices; dark current fixed-pattern noise; digital imaging; interface-related dark current; solid-state image sensors; CMOS image sensors; Charge coupled devices; Clocks; Dark current; Electrostatics; Image sensors; Noise reduction; Optoelectronic and photonic sensors; Pixel; Solid state circuits; CMOS image sensors; Charge-coupled device (CCD) image sensors; pinned photodiodes (PPDs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.885545
  • Filename
    4016364