Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide

Author

Maximov, M.V. ; Shernyakov, Yu.M. ; Novikov, I.I. ; Shchukin, V.A. ; Shamid, I. ; Ledentsov, N.N.

Author_Institution

Abraham Ioffe Phys. Tech. Inst., St Petersburg, Russia

Volume

39

Issue

24

fYear

2003

Firstpage

1729

Lastpage

1731

Abstract

Narrow (<5°) vertical beam divergence is realised in an InGaAs-AlGaAs double-quantum well edge-emitting laser diode. A multilayer GaAs-AlGaAs structure was used as a waveguide, acting as a longitudinal photonic band crystal and enabling stable fundamental mode operation. Longitudinal mode grouping effect is observed in the lasing spectrum and attributed to the transverse cavity-induced hole-burning effect.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; optical hole burning; photonic crystals; quantum well lasers; waveguide lasers; InGaAs-AlGaAs; double-quantum well laser diode; edge-emitting laser diode; electroluminescence emission; far-field pattern; high-power semiconductor lasers; lasing spectrum; light-current characteristic; longitudinal mode grouping effect; longitudinal photonic band crystal; multilayer structure waveguide; narrow vertical beam divergence; stable fundamental mode operation; transverse cavity-induced hole-burning;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031127

Filename

1251544