• DocumentCode
    839470
  • Title

    Selective photochemical dry etching of GaAs/AlGaAs and InGaAs/InAlAs heterostructures

  • Author

    Kosugi, M. ; Kuroda, Sho ; Harada, Nobohiro ; Katakami, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    27
  • Issue
    23
  • fYear
    1991
  • Firstpage
    2113
  • Lastpage
    2115
  • Abstract
    Selective photochemical dry etching of GaAs layers on AlGaAs using HCl gas and InGaAs layers on InAlAs using CH3Br gas is studied. A low pressure mercury lamp was used as the deep UV light source. A selectivity of more than 150 for GaAs over AlGaAs and more than 60 for InGaAs over InAlAs was obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; semiconductor junctions; semiconductor technology; CH 3Br gas; GaAs; GaAs-AlGaAs; HCl gas; InGaAs; InGaAs-InAlAs; deep UV light source; heterostructures; low pressure mercury lamp; photochemical dry etching; selective etching; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911309
  • Filename
    104071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=839470