Title :
Embedded Source/Drain SiGe Stressor Devices on SOI: Integrations, Performance, and Analyses
Author :
Da Zhang ; White, Ted ; Nguyen, Bich-yen
Author_Institution :
Technol. Solutions Organ., Freescale Semicond., Austin, TX
Abstract :
A detailed investigation of embedded source/drain SiGe stressors (eSiGes) on a silicon-on-insulator substrate for pMOS performance enhancement is presented. It is found that the integration with undoped SiGe epitaxy suffers strain relaxation from a postepitaxy implantation. SiGe growth with in situ doping is able to retain high strain for carrier mobility enhancement. For doped eSiGe integration with a proper thermal sequence, 20% pMOS drive current improvement is demonstrated. Quantitative analyses of contributions from mobility enhancement and device exterior resistance reduction to the performance improvement are also discussed
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; ion implantation; semiconductor doping; silicon-on-insulator; SOI; SiGe; carrier mobility enhancement; device exterior resistance reduction; embedded source/drain SiGe stressor devices; in situ doping; pMOS performance enhancement; postepitaxy implantation; silicon-on-insulator substrate; strain relaxation; thermal sequence; undoped SiGe epitaxy; Annealing; CMOS technology; Capacitive sensors; Doping; Epitaxial growth; Germanium silicon alloys; Performance analysis; Silicon germanium; Silicon on insulator technology; Substrates; in situ doping; Embedded source/drain (S/D) stressor; SiGe epitaxy; mobility enhancement; silicon-on-insulator (SOI); strain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885534
