4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

Author

Liu, Handin ; Mcintosh, Dion ; Bai, Xiaogang ; Pan, Huapu ; Liu, Mingguo ; Campbell, Joe C. ; Cha, Ho Young

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA

Volume

20

Issue

18

fYear

2008

Firstpage

1551

Lastpage

1553

Abstract

We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 106, k ~ 0.1, and a spatially uniform response were achieved.

Keywords

avalanche photodiodes; dark conductivity; p-i-n photodiodes; silicon compounds; wide band gap semiconductors; PIN recessed-window avalanche photodiode; SiC; dark current; external quantum efficiency; photocurrent gain; spatially uniform response; wavelength 262 nm; Avalanche photodiodes; Chemical analysis; Conducting materials; Dark current; Detectors; Etching; Photodetectors; Photonic band gap; Semiconductor materials; Silicon carbide; Avalanche photodiodes (APDs); photodetector; silicon carbide; ultraviolet (UV) detector;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.928823

Filename

4603051