Title :
High responsivity GaN-based UV detectors
Author :
Potì, B. ; Todaro, M.T. ; Frassanito, M.C. ; Pomarico, A. ; Passaseo, A. ; Lomascolo, M. ; Cingolani, R. ; De Vittorio, M.
Author_Institution :
Dipt. Ingegneria dell´´Innovazione, Univ. di Lecce, Italy
Abstract :
The high temperature characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7×106A/W at room temperature and of 1.4×106A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations.
Keywords :
III-V semiconductors; gallium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device measurement; ultraviolet detectors; wide band gap semiconductors; 293 to 298 K; 325 nm; 450 K; DC responsivity; GaN; GaN-based ultraviolet detectors; MSM; high responsivity UV detectors; high temperature characterisation; metal-semiconductor-metal GaN-bulk photodetectors; visible blind photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031132
