• DocumentCode
    839573
  • Title

    InP/InGaAs pin photodiode structure maximising bandwidth and efficiency

  • Author

    Muramoto, Y. ; Ishibashi, T.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Kanagawa, Japan
  • Volume
    39
  • Issue
    24
  • fYear
    2003
  • Firstpage
    1749
  • Lastpage
    1750
  • Abstract
    A new photodiode design that combines depleted and neutral absorption layers to minimise carrier travelling delay time for a given total absorption layer thickness is proposed. The fabricated photodiode has a thick (0.8 μm) InGaAs absorption layer and achieves a responsivity of 0.98 A/W at λ=1.55 μm while still maintaining a high bandwidth of 50 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; minority carriers; p-i-n photodiodes; 1.55 micron; 50 GHz; InP-InGaAs; carrier travelling delay time; charge-control model; depleted absorption layers; effective minority electron velocity; high bandwidth; neutral absorption layers; pin photodiode design; responsivity; total hole charge;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031116
  • Filename
    1251557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=839573