DocumentCode
839652
Title
Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
Author
Aoki, Masaki ; Sano, Hiroyasu ; Suzuki, M. ; Takahashi, Masaharu ; Uomi, K. ; Takai, Asuka
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
27
Issue
23
fYear
1991
Firstpage
2138
Lastpage
2140
Abstract
A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of InGaAs/InGaAsP MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6 dB extinction ratio is demonstrated.
Keywords
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical modulation; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; DFB-laser; InGaAs-InGaAsP; MQW structures; electroabsorption modulator; integrated device; selective area MOCVD growth; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911324
Filename
104086
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