Title :
Complementary vertical bipolar transistor process using high-energy ion implantation
Author :
Ragay, F.W. ; Aarnink, A.A.I. ; Wallinga, H.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
High-energy ion implantation is used as a key processing step in the formation of a complementary bipolar process with both transistor types being vertical. Both n-p-n and p-n-p transistors are made vertically with a deep implanted collector region. Combinations of epitaxial and buried layers are avoided. Both transistors have an ideal Gummel plot with a current gain of about 60. Cutoff frequencies of over 1 GHz have been measured, which is much higher than for conventional lateral p-n-p transistors.
Keywords :
bipolar integrated circuits; integrated circuit technology; ion implantation; 1 GHz; complementary bipolar process; deep implanted collector region; high-energy ion implantation; ideal Gummel plot; vertical bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911326