DocumentCode
83982
Title
A Monolithic CMOS Image Sensor With Wire-Grid Polarizer Filter Mosaic in the Focal Plane
Author
Milin Zhang ; Xiaotie Wu ; Engheta, Nader ; Van der Spiegel, Jan
Author_Institution
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
Volume
61
Issue
3
fYear
2014
fDate
Mar-14
Firstpage
855
Lastpage
862
Abstract
In this paper, we report on an image sensor with an integrated focal-plane 2 × 2 wire-grid polarizer for the visible spectrum, fabricated in a 65-nm standard CMOS technology. This imager enables the reconstruction of the polarization response for each pixel. Finite-difference time-domain method has been used to optimize the extinction ratio (ER) in the visible spectrum of a multilayered focal-plane wire-grid polarizer. Experimental results show that an ER of 16.35 dB is achieved with a standard error of ~ 0.25% between the experimental results and the fitting sinusoidal polarization response curve. Design guidelines for the wire-grid polarizer are derived based on numerical analysis and experimental results. Sensitivity ratio is defined to balance the tradeoff between the intensity sensitivity and polarization sensitivity of the imager.
Keywords
CMOS image sensors; finite difference time-domain analysis; ER; FDTD method; extinction ratio; finite-difference time-domain method; intensity sensitivity; monolithic CMOS image sensor; multilayered focal-plane wire-grid polarizer; numerical analysis; polarization sensitivity; sinusoidal polarization response curve; size 65 nm; visible spectrum; CMOS integrated circuits; Erbium; Gratings; Sensitivity; Standards; Wires; Metallic gratings; polarimetry; polarization sensitive image sensor;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2299757
Filename
6729090
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